SQJ990EP www.vishay.com vishay siliconix s16-1496-rev. a, 25-jul-16 1 document number: 77789 for technical questions, contact: automostechsuppo rt@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 automotive dual n-channel 100 v (d-s) 175 c mosfets featuress ? trenchfet ? power mosfet ? aec-q101 qualified ? 100 % r g and uis tested ? optimized for synchrono us buck applications ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 notes a. package limited. b. pulse test; pulse width ? 300 s, duty cycle ? 2 %. c. when mounted on 1" square pcb (fr4 material). d. see solder profile ( www.vishay.com/doc?73257 ). the powerpak so-8l is a leadless package. the end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. a solder fillet at the exposed copper tip cannot b e guaranteed and is not required to ensure adequa te bottom side sold er interconnection. e. rework conditions: manual soldering with a solderin g iron is not recommended for leadless components. product summary n-channel 1 n-channel 2 v ds (v) 100 100 r ds(on) ( ? ) at v gs = 10 v 0.0400 0.0190 r ds(on) ( ? ) at v gs = 4.5 v 0.0505 0.0235 i d (a) 17 34 configuration dual n package powerpak so-8l dual asymmetric powerpak ? s o-8l dual asymmetric bottom view 2 g 1 3 s 2 4 g 2 1 s 1 d 2 d 1 top view 1 6.15 mm 5 .13 mm 1 6.1 5 m m 5 13 m m n-channel 1 mosfet d 1 g 1 s 1 n-channel 2 mosfet d 2 g 2 s 2 absolute maximum ratings (t c = 25 c, unless otherwise noted) parameter symbol n-channel 1 n-channel 2 unit drain-source voltage v ds 100 100 v gate-source voltage v gs 20 continuous drain current t c = 25 c i d 17 34 a t c = 125 c 10 19 continuous source curre nt (diode conduction) i s 20 a 44 pulsed drain current b i dm 40 80 single pulse avalanche current l = 0.1 mh i as 17 28 single pulse avalanche energy e as 14.4 39.2 mj maximum power dissipation b t c = 25 c p d 27 48 w t c = 125 c 9 16 operating junction and storage temperature range t j , t stg -55 to +175 c soldering recommendations (peak temperature) d, e 260 thermal resistance ratings parameter symbol n-channel 1 n-channel 2 unit junction-to-ambient pcb mount c r thja 85 85 c/w junction-to-case (drain) r thjc 5.5 3.1
SQJ990EP www.vishay.com vishay siliconix s16-1496-rev. a, 25-jul-16 2 document number: 77789 for technical questions, contact: automostechsuppo rt@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 specifications (t c = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a n-ch 1 100 - - v v gs = 0 v, i d = 250 a n-ch 2 100 - - gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a n-ch 1 1.5 2.0 2.5 v ds = v gs , i d = 250 a n-ch 2 1.5 2.0 2.5 gate-source leakage i gss v ds = 0 v, v gs = 20 v n-ch 1 - - 100 na n-ch 2 - - 100 zero gate voltage drain current i dss v gs = 0 v v ds = 100 v n-ch 1 - - 1 a v gs = 0 v v ds = 100 v n-ch 2 - - 1 v gs = 0 v v ds = 100 v, t j = 125 c n-ch 1 - - 50 v gs = 0 v v ds = 100 v, t j = 125 c n-ch 2 - - 50 v gs = 0 v v ds = 100 v, t j = 175 c n-ch 1 - - 250 v gs = 0 v v ds = 100 v, t j = 175 c n-ch 2 - - 250 on-state drain current a i d(on) v gs = 10 v v ds ? 5 v n-ch 1 10 - - a v gs = 10 v v ds ? 5 v n-ch 2 20 - - drain-source on-state resistance a r ds(on) v gs = 10 v i d = 6 a n-ch 1 - 0.0325 0.0400 ? v gs = 10 v i d = 10 a n-ch 2 - 0.0154 0.0190 v gs = 10 v i d = 6 a, t j = 125 c n-ch 1 - - 0.0694 v gs = 10 v i d = 10 a, t j = 125 c n-ch 2 - - 0.0326 v gs = 10 v i d = 6 a, t j = 175 c n-ch 1 - - 0.0877 v gs = 10 v i d = 10 a, t j = 175 c n-ch 2 - - 0.0412 v gs = 4.5 v i d = 4 a n-ch 1 - 0.0412 0.0505 v gs = 4.5 v i d = 8 a n-ch 2 - 0.0191 0.0235 forward transconductance b g fs v ds = 10 v, i d = 6 a n-ch 1 - 17 - s v ds = 10 v, i d = 10 a n-ch 2 - 34 - dynamic b input capacitance c iss v gs = 0 v v ds = 25 v, f = 1 mhz n-ch 1 - 475 650 pf v gs = 0 v v ds = 25 v, f = 1 mhz n-ch 2 - 1065 1390 output capacitance c oss v gs = 0 v v ds = 25 v, f = 1 mhz n-ch 1 - 280 375 v gs = 0 v v ds = 25 v, f = 1 mhz n-ch 2 - 560 750 reverse transfer capacitance c rss v gs = 0 v v ds = 25 v, f = 1 mhz n-ch 1 - 18 25 v gs = 0 v v ds = 25 v, f = 1 mhz n-ch 2 - 37 50 total gate charge c q g v gs = 10 v v ds = 50 v, i d = 1 a n-ch 1 - 10 15 nc v gs = 10 v v ds = 50 v, i d = 1 a n-ch 2 - 20 30 gate-source charge c q gs v gs = 10 v v ds = 50 v, i d = 1 a n-ch 1 - 2 - v gs = 10 v v ds = 50 v, i d = 1 a n-ch 2 - 3 - gate-drain charge c q gd v gs = 10 v v ds = 50 v, i d = 1 a n-ch 1 - 3 - v gs = 10 v v ds = 50 v, i d = 60 a n-ch 2 - 5 - gate resistance r g f = 1 mhz n-ch 1 1.2 2.5 3.8 ? n-ch 2 0.6 1.4 2.2
SQJ990EP www.vishay.com vishay siliconix s16-1496-rev. a, 25-jul-16 3 document number: 77789 for technical questions, contact: automostechsuppo rt@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes a. pulse test; pulse width ? 300 s, duty cycle ? 2 %. b. guaranteed by design, not subj ect to production testing. c. independent of operating temperature. stresses beyond those listed under absolute maximum ratings ma y cause permanent damage to th e device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those in dicated in the operational sectio ns of the specifications is not implied. exposure to absolute maximum rating conditions for extended pe riods may affect device reliability. dynamic b turn-on delay time c t d(on) v dd = 50 v, r l = 5 ? , i d ? 1 a, v gen = 10 v, r g = 1 ? n-ch 1 - 8 15 ns v dd = 50 v, r l = 5 ? , i d ? 1 a, v gen = 10 v, r g = 1 ? n-ch 2 - 12 20 rise time c t r v dd = 50 v, r l = 5 ? , i d ? 1 a, v gen = 10 v, r g = 1 ? n-ch 1 - 3 5 v dd = 50 v, r l = 5 ? , i d ? 1 a, v gen = 10 v, r g = 1 ? n-ch 2 - 3 5 turn-off delay time c t d(off) v dd = 50 v, r l = 5 ? , i d ? 1 a, v gen = 10 v, r g = 1 ? n-ch 1 - 22 35 v dd = 50 v, r l = 5 ? , i d ? 1 a, v gen = 10 v, r g = 1 ? n-ch 2 - 28 45 fall time c t f v dd = 50 v, r l = 5 ? , i d ? 1 a, v gen = 10 v, r g = 1 ? n-ch 1 - 21 35 v dd = 50 v, r l = 5 ? , i d ? 1 a, v gen = 10 v, r g = 1 ? n-ch 2 - 22 35 source-drain diode ratings and characteristics b pulsed current a i sm n-ch 1 - - 40 a n-ch 2 - - 80 forward voltage v sd i f = 6 a, v gs = 0 v n-ch 1 - 0.87 1.2 v i f = 10 a, v gs = 0 v n-ch 2 - 0.84 1.2 specifications (t c = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit
SQJ990EP www.vishay.com vishay siliconix s16-1496-rev. a, 25-jul-16 4 document number: 77789 for technical questions, contact: automostechsuppo rt@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 n-channel 1 typical characteristics (t a = 25 c, unless otherwise noted) output characteristics transfer characteristics on-resistance vs. drain current transconductance capacitance gate charge 10 100 1000 10000 0 10 20 30 40 50 0246810 axis title 1st line 2nd line 2nd line i d - drain current (a) v ds - drain-to-source voltage (v) 2nd line v gs = 10 v thru 5 v v gs = 4 v v gs = 3 v 10 100 1000 10000 0 8 16 24 32 40 0246810 axis title 1st line 2nd line 2nd line i d - drain current (a) v gs - gate-to-source voltage (v) 2nd line t c = 25 c t c =-55 c t c = 125 c 10 100 1000 10000 0.00 0.03 0.06 0.09 0.12 0.15 0 5 10 15 20 25 axis title 1st line 2nd line 2nd line r ds(on) - on-resistance () i d - drain current (a) 2nd line v gs = 4.5 v v gs = 10 v 10 100 1000 10000 0 5 10 15 20 25 0246810 axis title 1st line 2nd line 2nd line g fs - transconductance (s) i d - drain current (a) 2nd line t c = 25 c t c =-55 c t c = 125 c 10 100 1000 10000 0 160 320 480 640 800 0 20406080100 axis title 1st line 2nd line 2nd line c - capacitance (pf) v ds - drain-to-source voltage (v) 2nd line c rss c oss c iss 10 100 1000 10000 0 2 4 6 8 10 03691215 axis title 1st line 2nd line 2nd line v gs - gate-to-source voltage (v) q g - total gate charge (nc) 2nd line i d = 1 a v ds = 50 v
SQJ990EP www.vishay.com vishay siliconix s16-1496-rev. a, 25-jul-16 5 document number: 77789 for technical questions, contact: automostechsuppo rt@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 n-channel 1 typical characteristics (t a = 25 c, unless otherwise noted) source drain diode forward voltage threshold voltage on-resistance vs. junction temperature on-resistance vs. gate-to-source voltage drain source breakdown vs . junction temperature safe operating area 10 100 1000 10000 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1.0 1.2 axis title 1st line 2nd line 2nd line i s - source current (a) v sd - source-to-drain voltage (v) 2nd line t j = 150 c t j = 25 c 10 100 1000 10000 -1.0 -0.7 -0.4 -0.1 0.2 0.5 -50 -25 0 25 50 75 100 125 150 175 axis title 1st line 2nd line 2nd line v gs(th) variance (v) t j - temperature (c) 2nd line i d = 5 ma i d = 250 a 10 100 1000 10000 0.5 0.9 1.3 1.7 2.1 2.5 -50-25 0 255075100125150175 axis title 1st line 2nd line 2nd line r ds(on) - on-resistance (normalized) t j - junction temperature (c) 2nd line i d = 6 a v gs = 10 v v gs = 4.5 v 10 100 1000 10000 0.00 0.05 0.10 0.15 0.20 0.25 0246810 axis title 1st line 2nd line 2nd line r ds(on) - on-resistance () v gs - gate-to-source voltage (v) 2nd line t j = 25 c t j = 150 c 10 100 1000 10000 110 113 116 119 122 125 -50 -25 0 25 50 75 100 125 150 175 axis title 1st line 2nd line 2nd line v ds - drain-to-source voltage (v) t j - junction temperature (c) 2nd line i d = 1 ma 10 100 1000 10000 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 1000 axis title 1st line 2nd line 2nd line i d - drain current (a) v ds - drain-to-source voltage (v) (1) v gs > minimum v gs at which r ds(on) is specified i dm limited limited by r ds(on) (1) t c = 25 c single pulse bvdss limited 100 ms, 1 s, 10 s, dc 10 ms 1 ms 100 s
SQJ990EP www.vishay.com vishay siliconix s16-1496-rev. a, 25-jul-16 6 document number: 77789 for technical questions, contact: automostechsuppo rt@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 n-channel 1 typical characteristics (t a = 25 c, unless otherwise noted) normalized thermal transient impedance, junction-to-ambient normalized thermal transient impedance, junction-to-case note ? the characteristics shown in the graph: - normalized transient thermal impedance junction-to-ambient (25 c) is given for general guidelines only to enable the user to get a ball park indication of part capabilities. th e data are extr acted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. the latter is valid for the part mounted on printed circuit board - fr4, size 1" x 1" x 0.062" , double sided with 2 oz. copper, 100 % on both sides. the part ca pabilities can widely vary depending on actual application parameters and operating conditions. 10 -3 10 -2 1 1 0 600 10 -1 10 -4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square wave pulse duration (s) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 85 c/w 3. t jm - t a = p dm z th ja (t ) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 10 100 1000 10000 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 axis title 1st line 2nd line normalized effective transient thermal impedance square wave pulse duration (s) 2nd line 0.1 0.05 0.02 single pulse duty cycle = 0.5 0.2
SQJ990EP www.vishay.com vishay siliconix s16-1496-rev. a, 25-jul-16 7 document number: 77789 for technical questions, contact: automostechsuppo rt@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 n-channel 2 typical characteristics (t a = 25 c, unless otherwise noted) output characteristics transfer characteristics on-resistance vs. drain current transconductance capacitance gate charge 10 100 1000 10000 0 16 32 48 64 80 0246810 axis title 1st line 2nd line 2nd line i d - drain current (a) v ds - drain-to-source voltage (v) 2nd line v gs = 10 v thru 5 v v gs = 4 v v gs = 3 v 10 100 1000 10000 0 12 24 36 48 60 0246810 axis title 1st line 2nd line 2nd line i d - drain current (a) v gs - gate-to-source voltage (v) 2nd line t c = 25 c t c =-55 c t c = 125 c 10 100 1000 10000 0.000 0.010 0.020 0.030 0.040 0.050 0 1020304050 axis title 1st line 2nd line 2nd line r ds(on) - on-resistance () i d - drain current (a) 2nd line v gs = 4.5 v v gs = 10 v 10 100 1000 10000 0 10 20 30 40 50 03691215 axis title 1st line 2nd line 2nd line g fs - transconductance (s) i d - drain current (a) 2nd line t c = 25 c t c =-55 c t c = 125 c 10 100 1000 10000 0 360 720 1080 1440 1800 0255075100 axis title 1st line 2nd line 2nd line c - capacitance (pf) v ds - drain-to-source voltage (v) 2nd line c rss c oss c iss 10 100 1000 10000 0 2 4 6 8 10 0 5 10 15 20 25 axis title 1st line 2nd line 2nd line v gs - gate-to-source voltage (v) q g - total gate charge (nc) 2nd line i d = 1 a v ds = 50 v
SQJ990EP www.vishay.com vishay siliconix s16-1496-rev. a, 25-jul-16 8 document number: 77789 for technical questions, contact: automostechsuppo rt@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 n-channel 2 typical characteristics (t a = 25 c, unless otherwise noted) source drain diode forward voltage threshold voltage on-resistance vs. junction temperature on-resistance vs. gate-to-source voltage drain source breakdown vs . junction temperature safe operating area 10 100 1000 10000 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1.0 1.2 axis title 1st line 2nd line 2nd line i s - source current (a) v sd - source-to-drain voltage (v) 2nd line t j = 150 c t j = 25 c 10 100 1000 10000 -1.0 -0.7 -0.4 -0.1 0.2 0.5 -50 -25 0 25 50 75 100 125 150 175 axis title 1st line 2nd line 2nd line v gs(th) variance (v) t j - temperature (c) 2nd line i d = 5 ma i d = 250 a 10 100 1000 10000 0.5 0.9 1.3 1.7 2.1 2.5 -50-25 0 255075100125150175 axis title 1st line 2nd line 2nd line r ds(on) - on-resistance (normalized) t j - junction temperature (c) 2nd line i d = 10 a v gs = 10 v v gs = 4.5 v 10 100 1000 10000 0.00 0.02 0.04 0.06 0.08 0.10 0246810 axis title 1st line 2nd line 2nd line r ds(on) - on-resistance () v gs - gate-to-source voltage (v) 2nd line t j = 25 c t j = 150 c 10 100 1000 10000 105 109 113 117 121 125 -50 -25 0 25 50 75 100 125 150 175 axis title 1st line 2nd line 2nd line v ds - drain-to-source voltage (v) t j - junction temperature (c) 2nd line i d = 1 ma 10 100 1000 10000 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 1000 axis title 1st line 2nd line 2nd line i d - drain current (a) v ds - drain-to-source voltage (v) (1) v gs > minimum v gs at which r ds(on) is specified i dm limited limited by r ds(on) (1) t c = 25 c single pulse bvdss limited 100 ms, 1 s, 10 s, dc 10 ms 1 ms 100 s
SQJ990EP www.vishay.com vishay siliconix s16-1496-rev. a, 25-jul-16 9 document number: 77789 for technical questions, contact: automostechsuppo rt@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 n-channel 2 typical characteristics (t a = 25 c, unless otherwise noted) normalized thermal transient impedance, junction-to-ambient normalized thermal transient impedance, junction-to-case note ? the characteristics shown in the graph: - normalized transient thermal impedance junction-to-ambient (25 c) is given for general guidelines only to enable the user to get a ball park indication of part capabilities. th e data are extr acted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. the latter is valid for the part mounted on printed circuit board - fr4, size 1" x 1" x 0.062" , double sided with 2 oz. copper, 100 % on both sides. the part ca pabilities can widely vary depending on actual application parameters and operating conditions. vishay siliconix maintains worldw ide manufacturing ca pability. products may be manufactured at one of several qualified locatio ns. reliability da ta for silicon technology and package reliability represent a composite of all qu alified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?77789 . 10 -3 10 -2 1 1 0 600 10 -1 10 -4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square wave pulse duration (s) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 85 c/w 3. t jm - t a = p dm z th ja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 10 100 1000 10000 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 axis title 1st line 2nd line normalized effective transient thermal impedance square wave pulse duration (s) 2nd line 0.1 0.05 0.02 single pulse duty cycle = 0.5 0.2
legal disclaimer notice www.vishay.com vishay revision: 13-jun-16 1 document number: 91000 disclaimer ? all product, product specifications and data ar e subject to change with out notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of th e products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, vi shay disclaims (i) any and all liability arising out of the application or use of any product , (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all implied warranties, includ ing warranties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain types of applicatio ns are based on vishays knowledge of typical requirements that are often placed on vishay products in generic applications. such statements are not binding statements about the suitability of products for a particular applic ation. it is the customers responsibility to validate tha t a particular product with the prope rties described in the product sp ecification is suitable for use in a particular application. parameters provided in datasheets and / or specifications may vary in different ap plications and perfor mance may vary over time. all operating parameters, including ty pical parameters, must be va lidated for each customer application by the customer s technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product could result in personal injury or death. customers using or selling vishay product s not expressly indicated for use in such applications do so at their own risk. please contact authorized vishay personnel to obtain writ ten terms and conditions rega rding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.
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